Study on quantum electro-dynamics in vertical MOSFET

Masakazu Muraguchi, Tetsuo Endoh

研究成果: Article査読

1 被引用数 (Scopus)

抄録

We have studied transmission property of electron in vertical MOSFET (V-MOSFET) from the viewpoint of quantum electrodynamics. To obtain the intuitive picture of electron transmission property through channel of the V-MOSFET, we solve the time-dependent Schrödinger equation in real space by employing the split operator method. We injected an electron wave packet into the body of the V-MOSFET from the source, and traced the time-development of electron-wave function in the body and drain region. We successfully showed that the electron wave function propagates through the resonant states of the body potential. Our suggested approaches open the quantative and intuitive discussion for the carrier dynamics in the V-MOSFET on quantum limit.

本文言語English
ページ(範囲)552-556
ページ数5
ジャーナルIEICE Transactions on Electronics
E93-C
5
DOI
出版ステータスPublished - 2010 1月 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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