The impact of ultra-shallow junction and tilted channel implantation (TCI) is discussed with respect to source/drain resistance (Rsd), and short-channel effect (SCE) based on physical gate length (Lgate) and effective gate length (Leff). We obtained the following results: (1) A shallower junction improves the SCE immunity for a given Lgate, but not with respect to Leff. (2) The essential factor for the reduction of Rsd is not the sheet resistance (Rsheet) of source/drain (S/D) extensions, but the junction tailing profile. (3) TCI was found to be effective for increasing the current drive ability due to the reduced Leff for a given off current (loff). (4) The effectiveness of TCI was confirmed by a CV Leff extraction method. (5) Encouraged by above results, high-performance 0.1-μm pMOSFETs were demonstrated using a 1 keV, B+ or BF2+ implantation and TCI technology. The device achieved a high drive current (Idrive) of 360 μA/μm ( Vg = Vd = -1.5 V, Ioff = 1 nA/μm).
|ジャーナル||Technical Digest - International Electron Devices Meeting|
|出版ステータス||Published - 1998 12月 1|
|イベント||Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA|
継続期間: 1998 12月 6 → 1998 12月 9
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