Study of ultra shallow junction and tilted channel implantation for high performance 0.1 μm pMOSFETs

Ken ichi Goto, Masataka Kase, Yoichi Momiyama, Hajime Kurata, Tetsu Tanaka, Manabu Deura, Yasuhiro Sanbonsugi, Toshihiro Sugii

研究成果: Conference article査読

17 被引用数 (Scopus)

抄録

The impact of ultra-shallow junction and tilted channel implantation (TCI) is discussed with respect to source/drain resistance (Rsd), and short-channel effect (SCE) based on physical gate length (Lgate) and effective gate length (Leff). We obtained the following results: (1) A shallower junction improves the SCE immunity for a given Lgate, but not with respect to Leff. (2) The essential factor for the reduction of Rsd is not the sheet resistance (Rsheet) of source/drain (S/D) extensions, but the junction tailing profile. (3) TCI was found to be effective for increasing the current drive ability due to the reduced Leff for a given off current (loff). (4) The effectiveness of TCI was confirmed by a CV Leff extraction method. (5) Encouraged by above results, high-performance 0.1-μm pMOSFETs were demonstrated using a 1 keV, B+ or BF2+ implantation and TCI technology. The device achieved a high drive current (Idrive) of 360 μA/μm ( Vg = Vd = -1.5 V, Ioff = 1 nA/μm).

本文言語English
ページ(範囲)631-633
ページ数3
ジャーナルTechnical Digest - International Electron Devices Meeting
出版ステータスPublished - 1998 12月 1
外部発表はい
イベントProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
継続期間: 1998 12月 61998 12月 9

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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