Study of reliability physics on high-k/metal gate and power devices

M. Niwa

研究成果: Conference contribution

抄録

This paper focuses attention on MOS interface phenomena. Key issues on Hf-based high-k/metal gate CMOS technology by gate first process for low operational power applications are overviewed. One of the issues is how to control the oxygen vacancy distribution in the high-k/metal gate system, which is requisite for important work-function tuning with EOT scaling. Quantitative understanding of the potential distribution in this system is crucial for obtaining the appropriate Vth in advanced CMOS devices under a low supply voltage operation. In the meantime, breakdown phenomenon and its mechanism of SiC MOS capacitors are studied. Characteristic electric breakdown traces with carpet-bombing-like concaves are observed for Al/SiO2/SiC MOS capacitors. From TD(Z)DB measurements, the breakdown mechanism is explained and the conduction behaviour during the breakdown can be inferable by elaborating the measurement setup.

本文言語English
ホスト出版物のタイトルProceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
出版社Institute of Electrical and Electronics Engineers Inc.
ページ484-487
ページ数4
ISBN(電子版)9781479999286, 9781479999286
DOI
出版ステータスPublished - 2015 8月 25
イベント22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, Taiwan, Province of China
継続期間: 2015 6月 292015 7月 2

出版物シリーズ

名前Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
2015-August

Other

Other22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
国/地域Taiwan, Province of China
CityHsinchu
Period15/6/2915/7/2

ASJC Scopus subject areas

  • 電子工学および電気工学

フィンガープリント

「Study of reliability physics on high-k/metal gate and power devices」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル