Study of oxide breakdown under very low electric field

A. Teramoto, H. Umeda, K. Azamawari, K. Kobayashi, K. Shiga, J. Komori, Y. Ohno, H. Miyoshi

研究成果: Conference contribution

21 被引用数 (Scopus)

抄録

We have performed TDDB measurement at temperature lower than 125°C in electric field (EOX) range 7 - 13.5 MV/cm and evaluated the intrinsic lifetime in a wide electric field range, using both area and temperature dependences of oxide lifetime. For positive gate bias, log(tBD) of 7.1 and 9.6 nm oxides is not proportional to the electric field but proportional to 1/EOX. This suggests that the breakdown mechanism of 9.6 nm oxide is the same as that of 7.1 nm oxide and adheres to the anode hole injection model. However, the breakdown mechanism of 4.0 nm is not the same as that of 7.1 and 9.6 nm oxides. The slope of log(tBD) versus 1/EOX plot in 4.0 nm oxide increases with decrease in oxide field. The intrinsic lifetime in the positive gate bias decreases with increasing oxide thickness, while the lifetime in the negative gate bias increases with increasing oxide thickness in the range of electric fields employed in this present experiment.

本文言語English
ホスト出版物のタイトルAnnual Proceedings - Reliability Physics (Symposium)
出版社IEEE
ページ66-71
ページ数6
ISBN(印刷版)0780352203
出版ステータスPublished - 1999 1 1
外部発表はい
イベントProceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium - San Diego, CA, USA
継続期間: 1999 3 231999 3 25

出版物シリーズ

名前Annual Proceedings - Reliability Physics (Symposium)
ISSN(印刷版)0099-9512

Other

OtherProceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium
CitySan Diego, CA, USA
Period99/3/2399/3/25

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 安全性、リスク、信頼性、品質管理

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