Study of initial stage of SiC growth on Si(100) surface by XPS, RHEED and SEM

T. Takaoka, H. Saito, Y. Igari, I. Kusunoki

    研究成果: Conference article査読

    2 被引用数 (Scopus)

    抄録

    Initial stage of SiC growth on Si(100) surface at sample temperatures between 600 and 900 °C was studied using XPS (X-ray photoelectron spectroscopy), RHEED (reflection high energy electron diffraction), and SEM (scanning electron microscopy). Growth rate of silicon carbide film, and surface structure and morphology during the reaction were observed.

    本文言語English
    ページ(範囲)203-206
    ページ数4
    ジャーナルMaterials Science Forum
    264-268
    pt 1
    DOI
    出版ステータスPublished - 1998
    イベントProceedings of the 1997 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, ICSCIII. Part 1 (of 2) - Stockholm, Sweden
    継続期間: 1997 9月 30 → …

    ASJC Scopus subject areas

    • 材料科学(全般)
    • 凝縮系物理学
    • 材料力学
    • 機械工学

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