Initial stage of SiC growth on Si(100) surface at sample temperatures between 600 and 900 °C was studied using XPS (X-ray photoelectron spectroscopy), RHEED (reflection high energy electron diffraction), and SEM (scanning electron microscopy). Growth rate of silicon carbide film, and surface structure and morphology during the reaction were observed.
|ジャーナル||Materials Science Forum|
|出版ステータス||Published - 1998|
|イベント||Proceedings of the 1997 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, ICSCIII. Part 1 (of 2) - Stockholm, Sweden|
継続期間: 1997 9月 30 → …
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