Study for realization of spin-polarized field effect transistor in In0.75Ga0.25As/In0.75Al0.25As heterostructure

Yuuki Sato, Shin ichiro Gozu, Tomohiro Kita, Syoji Yamada

研究成果: Conference article査読

18 被引用数 (Scopus)


For realization of the spin-polarized field effect transistor (spin-FET), we investigated a gated modulation of spin-orbit interaction and a spin-injection from a ferromagnetic metal (FM) to a two-dimensional electron gas (2DEG). Prepared samples were an In0.75Ga0.25As/In0.75Al0.25As modulation-doped narrow-gap heterojunction grown by molecular beam epitaxy (MBE). For the determination of spin-orbit interaction parameter, α, we measured Shubnikov-de Haas (SdH) oscillations at 1.5 K. We confirmed a modulation of α when a gate voltage was applied. We also carried out spin-injection experiments using a multi-terminal geometry sample, which had two different widths Ni40Fe60 electrodes. We observed a spin-valve like effect in a source-drain resistance of ∼ 0.1% as well as a resistance hysteresis behavior of ∼ 12% in non-local geometry below 20 K. These results are the first step to realize an active spintronic device, such as spin-FET.

ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
出版ステータスPublished - 2002 1
イベント14th International Conference on the - Prague, Czech Republic
継続期間: 2001 7 302001 8 3

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学


「Study for realization of spin-polarized field effect transistor in In<sub>0.75</sub>Ga<sub>0.25</sub>As/In<sub>0.75</sub>Al<sub>0.25</sub>As heterostructure」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。