STT-MRAM for low power systems

研究成果: Conference contribution

抄録

Recently in semiconductor memories, it is becoming difficult to meet the target performance requirements by technology development based solely on device scaling. Especially, due to the increase in memory capacity, increased operation speed and increased leakage current of MOSFET, the power consumption of LSI is rapidly increasing.

本文言語English
ホスト出版物のタイトル2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781479973750
DOI
出版ステータスPublished - 2015 6 3
イベント2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015 - Hsinchu, Taiwan, Province of China
継続期間: 2015 4 272015 4 29

出版物シリーズ

名前International Symposium on VLSI Technology, Systems, and Applications, Proceedings
2015-June
ISSN(印刷版)1930-8868

Other

Other2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
国/地域Taiwan, Province of China
CityHsinchu
Period15/4/2715/4/29

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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