STS study of 2D subband state formed in the space charge layer of Si(111)-β √3 × √3-Bi

Katsumi Nagaoka, Shin Yaginuma, Tomonobu Nakayama

    研究成果: Article査読

    2 被引用数 (Scopus)

    抄録

    In order to gain better understanding of the 2D subband formation in the space charge layer of Si(111)-β√3 × √3-Bi, we have performed scanning tunneling microscopy and spectroscopy studies on the surface at 77 K. This surface is identified as an insulator the band gap of which is larger than that of Si. The dI/dV measurements inside the surface band gap reveal that band bending reaches -0.15 eV at the interface, which corresponds to the quantum-well depth of this system. In addition to the bulk and interface CBMs, an additional state can be found between them. This state is attributed to the bottom of the 2D subband state, since the energy position is in a good agreement with that obtained by semi-classical calculation.

    本文言語English
    ページ(範囲)217-220
    ページ数4
    ジャーナルe-Journal of Surface Science and Nanotechnology
    12
    DOI
    出版ステータスPublished - 2014 5 10

    ASJC Scopus subject areas

    • Biotechnology
    • Bioengineering
    • Condensed Matter Physics
    • Mechanics of Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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