Structures of the Ga-rich 4×2 and 4×6 reconstructions of the GaAs(001) surface

Qikun Xue, T. Hashizume, J. M. Zhou, T. Sakata, T. Ohno, T. Sakurai

    研究成果: Article査読

    188 被引用数 (Scopus)

    抄録

    Utilizing the advantages of migration enhanced epitaxy, a systematic molecular beam epitaxyscanning tunneling microscopy investigation was carried out for the first time on the GaAs(001) Ga-rich 4×2 and 4×6 phases and a unified structural model has been proposed based on a first-principles total-energy calculation. The 4×2 phase consists of two Ga dimers on the top layer and another Ga dimer at the third layer, a mirror image of the As-rich 2×4 phase, and the 4×6 phase accommodates the periodic array of Ga clusters at the 4×6 unit corner on top of the 4×2 phase.

    本文言語English
    ページ(範囲)3177-3180
    ページ数4
    ジャーナルPhysical review letters
    74
    16
    DOI
    出版ステータスPublished - 1995

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    フィンガープリント 「Structures of the Ga-rich 4×2 and 4×6 reconstructions of the GaAs(001) surface」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル