Structure study of thin RPECVD CdxZn1-xS films

N. I. Fainer, M. L. Kosinova, Yu M. Rumyantsev, E. A. Maximovski, M. Terauchi, K. Shibata, F. Satoh, M. Tanaka, N. P. Sysoeva, F. A. Kuznetsov

研究成果: Conference article査読

抄録

Thin CdxZn1-xS films have been deposited on Si(100), GaAs (100) and fused silica substrates at low pressure in the temperature range of 473-673 K by remote plasma enhanced chemical vapor deposition (RPECVD) using Cd/Zn(S2CN(C2H5)2) 2·C10H8N2 as single-source precursor. The influence of deposition conditions on physical and chemical properties of the films has been studied by ellipsometry, IR- and Raman spectroscopies, SEM, HREM, SAED, EDS and X-ray diffraction using synchrotron radiation. The zinc and cadmium concentration gradient along the film thickness was observed. The CdxZn1-xS film is substitution solid solution with hexagonal texture structure.

本文言語English
ページ(範囲)Pr3979-Pr3985
ジャーナルJournal De Physique. IV : JP
11
3
DOI
出版ステータスPublished - 2001
外部発表はい
イベント13th European Conference on Chemical Vapor Deposition (EUROCVD 13) - Athens, Greece
継続期間: 2001 8月 262001 8月 31

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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