Structure of the GaAs(100) Surface during Electrochemical Reactions Determined by Electrochemical Atomic Force Microscopy

Kohei Uosaki, Michio Koinuma, Namiki Sekine, Shen Ye

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Electrochemical atomic force microscope was employed to observe and modify the structure of the GaAs(100) surface and to investigate the electrodeposition of Cu on the p-GaAs(100) face in various electrolyte solutions under potential control. Atomic arrangement of the (100)-(1x1) structure was observed at both p-type and n-type GaAs electrodes. Sub-μm pattern was created by the scanning of an AFM tip. This is due to the tip-induced anodic dissolution reaction. How the Cu deposition proceeded strongly depended on the surface structure of the GaAs, the applied potential, and the concentration of Cu2+ ion in solution. Atomic arrangement corresponding to the Cu(111)-(1x1) was observed on top of the Cu deposits.

本文言語English
ページ(範囲)189-201
ページ数13
ジャーナルACS Symposium Series
656
DOI
出版ステータスPublished - 1997
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 化学工学(全般)

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