Structure of α- and β-Si3N4 observed by 1 MV electron microscopy

K. Hiraga, K. Tsuno, D. Shindo, M. Hirabayashi, S. Hayashi, T. Hirai

研究成果: Article

11 引用 (Scopus)

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Crystal structures of Si2N4 prepared by chemical vapour deposition (CVD) have been observed on the atomic scale by high-voltage, high-resolution electron microscopy. Many-beam imagee with [001] axial illumination exhibit the projected potential with trigonal and hexagonal symmetry for α- and β-Si2N4 respectively at thicknesses of less than about 10 nm. The image contrasts are discussed on the basis of multislice calculations as a function of crystal thickness and objective lens defocus. Excellent agreement is obtained between the observed and calculated images for both crystals. An atomic model of a structure defect in β-Si2N4 is proposed directly from the images.

元の言語English
ページ(範囲)483-496
ページ数14
ジャーナルPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
47
発行部数4
DOI
出版物ステータスPublished - 1983 4

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)
  • Metals and Alloys

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