Structure modulation of a III-V alloy semiconductor Al0.5In0.5P was investigated by electron diffraction and high-resolution electron microscopy (HREM). By utilizing an energy filter, the background of the electron diffraction patterns was markedly reduced and two types of the diffuse scattering were clearly revealed. One type of diffuse scattering is situated at the midpoint of the fundamental reflections while the other type is situated around the fundamental reflections. From the analysis of the HREM image, the structure modulation is interpreted to result from the ordering and the concentration modulation of Al and In. Furthermore, a structure model of Al0.5In0.5P is derived from the HREM image, and diffraction intensity calculated based on the structure model shows good agreement with the observed intensity.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 1998|
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