Structure-designable method to form super low-k SiOC film (k = 2.2) by neutral-beam-enhanced chemical vapour deposition

Shigeo Yasuhara, Juhyun Chung, Kunitoshi Tajima, Hisashi Yano, Shingo Kadomura, Masaki Yoshimaru, Noriaki Matsunaga, Tomohiro Kubota, Hiroto Ohtake, Seiji Samukawa

研究成果: Article査読

18 被引用数 (Scopus)

抄録

To precisely control the dielectric constant and the structure of a low-k SiOC film, we have developed a neutral-beam-enhanced chemical vapour deposition (NBECVD) method. Using Ar NBECVD, we can precisely control the dielectric constant and the film modulus of low-k SiOC deposited on Si substrates because this method avoids precursor dissociation that results from electron collisions and UV photons in plasma. Optimizing the ratio between Si-O and Si-(CH 3)x as well as the proportions of linear (two-dimensional SiOC), network and cage (three-dimensional SiOC) structures by changing the precursor, we obtained a k value of 2.2 and a reasonable modulus by using dimethyl dimethoxy silane as a precursor. Additionally, the NBECVD process is applicable as a method for damage-free super-low-k film deposition on the underlying low-k film that is sensitive to damage by the plasma.

本文言語English
論文番号055208
ジャーナルJournal of Physics D: Applied Physics
42
5
DOI
出版ステータスPublished - 2009

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 音響学および超音波学
  • 表面、皮膜および薄膜

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