Structure and optical properties of Si and SiGe layers grown on SiO2 by chemical vapor deposition

A. A. Shklyaev, V. I. Vdovin, V. A. Volodin, D. V. Gulyaev, A. S. Kozhukhov, M. Sakuraba, J. Murota

研究成果: Article査読

12 被引用数 (Scopus)

抄録

Abstract The properties of thin Si and SiGe layers grown on SiO2 by chemical vapor deposition (CVD) were studied using transmission electron and atomic force microscopies, and Raman and photoluminescence (PL) spectroscopies. The layers with a composition of Si0.5Ge0.5 become composed of nanocrystals with an average size of about 100 nm at growth temperatures of 550 C which is significantly lower than that for the pure Si layers. Moreover, the Si0.5Ge0.5 layers exhibit a broad PL peak centered at 0.8 eV, whereas the bandgap of unstrained Si0.5Ge0.5 is about 1 eV. This indicates that PL occurs through deep energy levels in the bandgap, which can be associated with crystal defects. The predominance of deep-level PL in radiative emission can be the result of a high concentration of defects that appear due to a low growth temperature.

本文言語English
論文番号34156
ページ(範囲)131-135
ページ数5
ジャーナルThin Solid Films
579
DOI
出版ステータスPublished - 2015 3月 31

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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