Structure and electrical properties of (Pr, Mn)-codoped BiFeO 3B-doped diamond layered structure

Takeshi Kawae, Yuji Hori, Takashi Nakajima, Hiroki Kawasaki, Norio Tokuda, Soichiro Okamura, Yoshihiko Takano, Akiharu Morimoto

研究成果: Article査読

5 被引用数 (Scopus)

抄録

As an integration of Pb-free ferroelectrics with wide-gap semiconductors, (Pr, Mn)-codoped BiFeO3 (BPFM)B-doped diamond layered structure was fabricated on a diamond substrate. B-doped diamond films were homoepitaxially grown on (100) diamond substrate using microwave plasma-enhanced chemical vapor deposition. Then, BPFM thin films were deposited on the B-doped diamond layer by pulsed laser deposition. BPFM thin films were polycrystalline with random orientations on the B-doped diamond layer. Fabricated heterostructure showed saturated P-E hysteresis curves at room temperature. The remnant polarization and the coercive field for maximum electric field of 1000 kVcm were 60 Ccm 2 and 480 kVcm, respectively.

本文言語English
ページ(範囲)G31-G34
ジャーナルElectrochemical and Solid-State Letters
14
6
DOI
出版ステータスPublished - 2011

ASJC Scopus subject areas

  • 化学工学(全般)
  • 材料科学(全般)
  • 物理化学および理論化学
  • 電気化学
  • 電子工学および電気工学

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