Structure and electrical properties of Ba3TaGa3Si2O14 single crystals grown by Czochralski method

Haruki Usui, Hiraku Kusakabe, Makoto Tokuda, Kazumasa Sugiyama, Takuya Hoshina, Takaaki Tsurumi, Hiroaki Takeda

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Ba3TaGa3Si2O14 (BTGS) bulk single crystals were grown by the Czochralski method. The crystal structure of BTGS has been refined using single-crystal X-ray diffraction data with a precision corresponding to an R index of 0.018. The crystal structure is isostructural to La3Ga5SiO14 which has the trigonal space group P321 and Z = 1, and the distribution of each cation is ordered in each site. Material constants and resistivity of the crystal were measured up to 550 °C. The results indicate that the BTGS crystal is a good candidate for piezoelectric applications in elevated temperatures.

本文言語English
ページ(範囲)441-446
ページ数6
ジャーナルJournal of the Ceramic Society of Japan
128
8
DOI
出版ステータスPublished - 2020 8 1

ASJC Scopus subject areas

  • セラミックおよび複合材料
  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学

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