TY - GEN
T1 - Structural properties of triple junctions acting as dislocation sources in high-performance Si ingots
AU - Ohno, Yutaka
AU - Tajima, Kazuya
AU - Kutsukake, Kentaro
AU - Usami, Noritaka
N1 - Funding Information:
This work is supported by JST/CREST (No. JPMJCR17J1 (2017-2023)).
Funding Information:
A part of this work is supported by the GIMRT Program in IMR, Tohoku University (Nos. 19M0037 and 19M0404), and "Network Joint Research Center for Materials and Devices: Dynamic Alliance for Open Innovation Bridging Human, Environment and Materials" in ISIR, Osaka University (No. 20191240).
Publisher Copyright:
© 2020 IEEE.
PY - 2020/6/14
Y1 - 2020/6/14
N2 - Dislocation clusters that would degrade the electric property can be generated from a grain boundary (GB) neighboring a triple junction of GBs. The atomic plane of the GB is bent via the movement of the triple junction, supposedly due to S3{111} micro-twins intersecting the GB, and a number of dislocations would be generated nearby the bending corner. Bundles of dislocation arrays expanding nearly parallel to the growth direction and honeycombed dislocation networks lying on a {111} plane nearly normal to the growth direction can coexist, suggesting that multiple slip systems would be operated when the dislocations are tangled.
AB - Dislocation clusters that would degrade the electric property can be generated from a grain boundary (GB) neighboring a triple junction of GBs. The atomic plane of the GB is bent via the movement of the triple junction, supposedly due to S3{111} micro-twins intersecting the GB, and a number of dislocations would be generated nearby the bending corner. Bundles of dislocation arrays expanding nearly parallel to the growth direction and honeycombed dislocation networks lying on a {111} plane nearly normal to the growth direction can coexist, suggesting that multiple slip systems would be operated when the dislocations are tangled.
KW - Triple junctions of grain boundaries
KW - dislocation sources
KW - high-performance multicrystalline Si ingots
KW - micro-twins
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U2 - 10.1109/PVSC45281.2020.9300738
DO - 10.1109/PVSC45281.2020.9300738
M3 - Conference contribution
AN - SCOPUS:85099529657
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 2340
BT - 2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Y2 - 15 June 2020 through 21 August 2020
ER -