Structural properties of triple junctions acting as dislocation sources in high-performance Si ingots

Yutaka Ohno, Kazuya Tajima, Kentaro Kutsukake, Noritaka Usami

研究成果: Conference contribution

抄録

Dislocation clusters that would degrade the electric property can be generated from a grain boundary (GB) neighboring a triple junction of GBs. The atomic plane of the GB is bent via the movement of the triple junction, supposedly due to S3{111} micro-twins intersecting the GB, and a number of dislocations would be generated nearby the bending corner. Bundles of dislocation arrays expanding nearly parallel to the growth direction and honeycombed dislocation networks lying on a {111} plane nearly normal to the growth direction can coexist, suggesting that multiple slip systems would be operated when the dislocations are tangled.

本文言語English
ホスト出版物のタイトル2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
出版社Institute of Electrical and Electronics Engineers Inc.
ページ2340
ページ数1
ISBN(電子版)9781728161150
DOI
出版ステータスPublished - 2020 6 14
イベント47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada
継続期間: 2020 6 152020 8 21

出版物シリーズ

名前Conference Record of the IEEE Photovoltaic Specialists Conference
2020-June
ISSN(印刷版)0160-8371

Conference

Conference47th IEEE Photovoltaic Specialists Conference, PVSC 2020
国/地域Canada
CityCalgary
Period20/6/1520/8/21

ASJC Scopus subject areas

  • 制御およびシステム工学
  • 産業および生産工学
  • 電子工学および電気工学

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