Structural characterization of MgO/c-Al2O3 interfaces

T. Minegishi, Takashi Hanada, H. Suzuki, Z. Vashaei, D. C. Oh, K. Sumitani, O. Sakata, M. W. Cho, T. Yao

研究成果: Conference article査読

1 被引用数 (Scopus)

抄録

We have found that MgO deposited on c-Al2O3 substrates at high temperatures formed MgAl2O4 by inter-diffusion during MgO layer growth. The formation of spinel MgAl 2O4 has been confirmed by in-situ reflection high energy electron diffraction (RHEED) and grazing incident X-ray diffracition (GIXD). The critical temperature (Tc) for the formation of MgAl 2O4 was found to be around 700 °C above which MgAl2O4 is formed at the MgO/c-Al2O3 interface.

本文言語English
ページ(範囲)1715-1718
ページ数4
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
4
5
DOI
出版ステータスPublished - 2007 12 1
イベント33rd International Symposium on Compound Semiconductors, ISCS-2006 - Vancouver, BC, Canada
継続期間: 2006 8 132006 8 17

ASJC Scopus subject areas

  • Condensed Matter Physics

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