Structural and optical properties of InAs quantum dots with 1.55 μm emission grown on (100) InAlAs/InP by using MBE

Self-assembled InAs quantum dots (QDs) on an In_0.52Al_0.48As layer lattice matched to a (100) InP substrate were grown by using solid-source molecular beam epitaxy. We investigated the effect of coverage on the structural and the optical properties of the InAs QDs by using atomic force microscopy and photoluminescence (PL). The QD size, the QD density, and the optical properties varied with the coverage. For a sample with 6.2 monolayer, the room temperature PL spectrum had an emission peak at 1.58 μm, and the full width at half maximum of the emission was about 73 meV. Good luminescence can be obtained from a nearly dislocation-free QD over the technologically important 1.3 ∼ 1.55 μm region by controlling the deposition of InAs.