Ti1-xFexO2-δ thin films have been deposited on Nb-doped SrTiO3 substrate by RF magnetron sputtering. The as-deposited thin films prepared at Tsub 300 ∼ 500°C exhibit anatase structure. The lattice constant depends on the crystallization temperature. The substitution of Fe ions is confirmed by photoemission spectra. The Ti 2p X-ray absorption spectra exhibit that Ti 3d-band occupancy is increased as a result of the oxygen vacancies. The thin film prepared at 500°C has the Ti 3d -DOS at the Fermi level. These findings indicate that Ti 3d electrons created by the oxygen vacancies contribute to the electrical conductivity.
|ジャーナル||Journal of Physics: Conference Series|
|出版ステータス||Published - 2014|
|イベント||1st Conference on Light and Particle Beams in Materials Science 2013, LPBMS 2013 - Tsukuba, Japan|
継続期間: 2013 8 29 → 2013 8 31
ASJC Scopus subject areas
- Physics and Astronomy(all)