Structural and electrical characteristics of Cu-Mn/SiOC/Si

S. M. Chung, J. Koike, Y. Otsuka, H. Sako, K. Ishibashi, N. Kawasaki

研究成果: Conference contribution

抄録

Structure and electrical characteristics were studied in Cu-Mn/SiOC/Si samples after annealing. A self-forming barrier layer was investigated for its chemical concentration and dielectric constants, depending on pre-annealing conditions of the SiOC substrate. Clear differences were observed by pre-annealing above 400 oC because of the moisture desorption.

本文言語English
ホスト出版物のタイトルAdvanced Metallization Conference 2010
ページ数1
出版ステータスPublished - 2010
イベントAdvanced Metallization Conference 2010 - Albany, NY, United States
継続期間: 2010 10 52010 10 7

出版物シリーズ

名前Advanced Metallization Conference (AMC)
ISSN(印刷版)1540-1766

Other

OtherAdvanced Metallization Conference 2010
国/地域United States
CityAlbany, NY
Period10/10/510/10/7

ASJC Scopus subject areas

  • 材料科学(全般)
  • 産業および生産工学

フィンガープリント

「Structural and electrical characteristics of Cu-Mn/SiOC/Si」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル