TY - JOUR
T1 - Strongly spin-orbit coupled two-dimensional electron gas emerging near the surface of polar semiconductors
AU - Sakano, M.
AU - Bahramy, M. S.
AU - Katayama, A.
AU - Shimojima, T.
AU - Murakawa, H.
AU - Kaneko, Y.
AU - Malaeb, W.
AU - Shin, S.
AU - Ono, K.
AU - Kumigashira, H.
AU - Arita, R.
AU - Nagaosa, N.
AU - Hwang, H. Y.
AU - Tokura, Y.
AU - Ishizaka, K.
PY - 2013/3/7
Y1 - 2013/3/7
N2 - We investigate the two-dimensional highly spin-polarized electron accumulation layers commonly appearing near the surface of n-type polar semiconductors BiTeX (X=I, Br, and Cl) by angular-resolved photoemission spectroscopy. Because of the polarity and the strong spin-orbit interaction built in the bulk atomic configurations, the quantized conduction-band subbands show giant Rashba-type spin splitting. The characteristic 2D confinement effect is clearly observed also in the valence bands down to the binding energy of 4 eV. The X-dependent Rashba spin-orbit coupling is directly estimated from the observed spin-split subbands, which roughly scales with the inverse of the band-gap size in BiTeX.
AB - We investigate the two-dimensional highly spin-polarized electron accumulation layers commonly appearing near the surface of n-type polar semiconductors BiTeX (X=I, Br, and Cl) by angular-resolved photoemission spectroscopy. Because of the polarity and the strong spin-orbit interaction built in the bulk atomic configurations, the quantized conduction-band subbands show giant Rashba-type spin splitting. The characteristic 2D confinement effect is clearly observed also in the valence bands down to the binding energy of 4 eV. The X-dependent Rashba spin-orbit coupling is directly estimated from the observed spin-split subbands, which roughly scales with the inverse of the band-gap size in BiTeX.
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U2 - 10.1103/PhysRevLett.110.107204
DO - 10.1103/PhysRevLett.110.107204
M3 - Article
AN - SCOPUS:84874869320
VL - 110
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 10
M1 - 107204
ER -