Stress dependence of infrared-active mode of the β-Si3N4 ceramic appearing at 1020 cm-1 measured by micro-FT-IR spectroscopy

Katsuya Honda, Shino Yokoyama, Shun Ichiro Tanaka

研究成果: Article

2 引用 (Scopus)

抜粋

The stress dependence of the β-Si3N4 infrared-active band appearing at ∼1020 cm-1 was evaluated by using micro-FT-IR. A four-point-bending jig was built to apply stress to the sample. Two β-Si3N4 ceramics, prepared by pressureless sintering and hot-pressed sintering, were examined. The hot-pressed sample showed a linear relation to applied stress, whereas the pressureless sintered sample showed relatively scattered stress dependence due to the inferior signal-to-noise ratio of the spectra. The stress dependence parameter of the 1020 cm-1 band was evaluated as ∼2 cm-1/GPa.

元の言語English
ページ(範囲)1274-1276
ページ数3
ジャーナルApplied spectroscopy
52
発行部数10
DOI
出版物ステータスPublished - 1998 10
外部発表Yes

ASJC Scopus subject areas

  • Instrumentation
  • Spectroscopy

フィンガープリント Stress dependence of infrared-active mode of the β-Si<sub>3</sub>N<sub>4</sub> ceramic appearing at 1020 cm<sup>-1</sup> measured by micro-FT-IR spectroscopy' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用