抄録
Lattice strains near the Si/NiSi2 interface and their effects on electron energy-levels of Si were investigated via experimental and theoretical approaches. For highly spatially resolved analysis, electron nanoprobe techniques were employed: convergent beam electron diffraction (CBED) for lattice strain and electron energy-loss spectroscopy (EELS) for the electron energy-levels. Additionally, a theoretical analysis based on the density-functional theory (DFT) was performed to explain the experimental results. The actual distribution of the lattice strains was complicated; both tensile and compressive strains were found to coexist near the interface. Shifts in the Si L23-edge of the EEL spectra were found to be induced by the lattice strain. Finally, we described the "distribution of the electron energy-levels" as the strain distribution around the interface in a submicron region.
本文言語 | English |
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ページ(範囲) | 408-413 |
ページ数 | 6 |
ジャーナル | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
巻 | 37 |
号 | 2 |
DOI | |
出版ステータス | Published - 1998 2月 |
外部発表 | はい |
ASJC Scopus subject areas
- 工学(全般)
- 物理学および天文学(全般)