Strain distribution near Si/NiSi2 interface measured by convergent beam electron diffraction

Yutaka Wakayama, Yumiko Takahashi, Shun ichiro Tanaka

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Lattice strain distribution was measured in Si (111) substrates near NiSi2 islands. Quantitative measurements with high spacial resolution were performed using convergent beam electron diffraction (CBED). Distorted and lower-symmetry CBED patterns were observed up to 2.0 μm from NiSi2 islands. We show that these CBED patterns can be accounted for by a combination of stress components with different orientations. Stresses were found to be tensile perpendicular to NiSi2 island edges and compressive parallel to them. In addition, another stress component which had a characteristic orientation was detectable within 0.5 μm of NiSi2 island edges.

本文言語English
ページ(範囲)L1662-L1665
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
35
12 B
DOI
出版ステータスPublished - 1996
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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