Stoichiometry of III-V compounds

Jun ichi Nishizawa, Yutaka Oyama

研究成果: Review article査読

56 被引用数 (Scopus)

抄録

Effects of stoichiometry control on electrical, optical and crystallographic features in III-V compounds are shown. The application of the optimum vapor pressure during annealing and crystal growth is shown to minimize the deviation from stoichiometric composition. Temperature-dependence of the optimum vapor pressure is also obtained. In view of the defect formation mechanism, existence of the stable interstitial arsenic atoms (IAs) in GaAs is emphasized. The mechanism of stoichiometry control is discussed on the basis of the equality of chemical potentials and the change of saturating solubility in the liquidus phase as a function of the vapor pressure.

本文言語English
ページ(範囲)273-426
ページ数154
ジャーナルMaterials Science and Engineering R
12
6-8
DOI
出版ステータスPublished - 1994 9 1
外部発表はい

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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