Stoichiometry-dependent deep levels in n-type InP prepared by annealing under controlled phosphorus vapor pressure

Jun Ichi Nishizawa, Yutaka Oyama, Ken Suto, Kiyoon Kim

研究成果: Article査読

13 被引用数 (Scopus)

抄録

The photocapacitance method is applied to investigate the stoichiometry-dependent deep levels in intentionally-undoped n-type InP crystals prepared by 4 h annealing at 700°C under controlled phosphorus vapor pressure. The present photocapacitance measurements reveal three dominant deep levels at 0.63 and 1.1 eV below the conduction band and 0.74 eV above the valence band, respectively. The phosphorus vapor pressure dependence of these level densities is also shown. The excitation photocapacitance results show the precise optical transition mechanism of these deep levels. In conjunction with the phosphorus vapor pressure dependence of the photocapacitance results, the defect formation mechanism is also discussed.

本文言語English
ページ(範囲)1488-1492
ページ数5
ジャーナルJournal of Applied Physics
80
3
DOI
出版ステータスPublished - 1996 8月 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

フィンガープリント

「Stoichiometry-dependent deep levels in n-type InP prepared by annealing under controlled phosphorus vapor pressure」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル