Photocapacitance (PHCAP) and deep-level photoluminescence (PL) measurements were applied to the liquid phase epitaxially grown n-Al0.3Ga0.7As doped with Te. The PHCAP measurements revealed deep levels at Ec-0.5 eV, Ec-1.1 eV, and Ev+1.5 eV. After 1.5 eV monochromatic light preirradiation, the signal intensity with respect to the Ec-0.5 eV level was increased. Deep-level PL bands at 1.21 and 1.36 eV were also detected. The optical transition mechanism of the Te-related DX center is proposed based on these experimental results.
|ジャーナル||Journal of Crystal Growth|
|出版ステータス||Published - 2000 3 1|
|イベント||8th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors - Narita, Jpn|
継続期間: 1999 9 15 → 1999 9 18
ASJC Scopus subject areas