Stoichiometry and Te related defect in n-Al0.3Ga0.7As

A. Murai, Y. Oyama, J. Nishizawa

研究成果: Conference article査読

抄録

Photocapacitance (PHCAP) and deep-level photoluminescence (PL) measurements were applied to the liquid phase epitaxially grown n-Al0.3Ga0.7As doped with Te. The PHCAP measurements revealed deep levels at Ec-0.5 eV, Ec-1.1 eV, and Ev+1.5 eV. After 1.5 eV monochromatic light preirradiation, the signal intensity with respect to the Ec-0.5 eV level was increased. Deep-level PL bands at 1.21 and 1.36 eV were also detected. The optical transition mechanism of the Te-related DX center is proposed based on these experimental results.

本文言語English
ページ(範囲)251-254
ページ数4
ジャーナルJournal of Crystal Growth
210
1
DOI
出版ステータスPublished - 2000 3 1
イベント8th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors - Narita, Jpn
継続期間: 1999 9 151999 9 18

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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