Stoichiometrically dependent deep levels in Sn-doped n-type InP

Jun ichi Nishizawa, Kiyoon Kim, Yutaka Oyama, Ken Suto

研究成果: Article査読

1 被引用数 (Scopus)

抄録

We report the results of a photocapacitance study on stoichiometrically dependent deep levels in Sn-doped n-type InP (liquid encapsulated Czochralski) prepared by 4 h annealing at 700 °C under a controlled phosphorus vapor pressure. Photocapacitance measurements have revealed three dominant deep levels. The dominant deep levels which were located at 0.63 and 1.10 eV below the conduction band, and 0.74 eV above the valence band, were observed after annealing. The change of level densities was shown as a function of applied phosphorus vapor pressure. These deep levels were attributed to poor phosphorus composition. In order to investigate the optical transition mechanism of these deep levels, the excitation photocapacitance measurements have been carried out. Amphoteric behavior due to Sn dopant before and after annealing is discussed.

本文言語English
ページ(範囲)1163-1166
ページ数4
ジャーナルJournal of the Electrochemical Society
146
3
DOI
出版ステータスPublished - 1999 3
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 再生可能エネルギー、持続可能性、環境
  • 表面、皮膜および薄膜
  • 電気化学
  • 材料化学

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