STM study on the interactions of C70 with the Si(100)2×1 surface

We have conducted a study of the adsorption, thin-film growth, and the reaction of C70 on the Si(100)2×1 surface. It is found that the crystalline thin film can be grown with good quality by keeping the substrate at approximately 120°C during deposition. C70's above the first layer can desorb at temperatures above approximately 250°C, which is similar to the situation in the bulk phase, but the first layer of the C70 film which is directly bonded to the Si(100) surface does not desorb or decompose upon heating to 1000°C. It reacts with the Si(100) substrate at temperatures above 1000°C to form the SiC(100)3×2 islands. The reaction products can finally desorb at temperatures above 1300°C, resulting in surface roughening.