STM studies of PtSi formation on Si(111) by solid state epitaxy

A. Wawro, Shozo Suto, A. Kasuya

研究成果: Article査読

22 被引用数 (Scopus)

抄録

Formation process and surface structure of platinum silicide thin layers have been studied using scanning tunneling microscopy. The investigated structures have been grown by solid state epitaxy upon deposition of 5 and 10 monolayers (ML) of platinum on the Si(111) surface and annealing at temperatures between 250°C and 1100°C. Platinum silicide exhibits a tendency to form islands as the annealing temperature increases. At a coverage of 5 ML the platinum silicide grows epitaxially with the relation of PtSi(010) Si(111). In contrast, for 10 ML coverage the PtSi(100) Si(111) growth was found. New types of surface reconstruction were observed on the both surfaces. Models successfully explaining investigated reconstructions are proposed. The electronic structure of platinum silicide in the vicinity of the Fermi level has been deduced from the scanning tunneling spectroscopy measurements.

本文言語English
論文番号205302
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
72
20
DOI
出版ステータスPublished - 2005 11 15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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