Static noise margin enhancement by flex-pass-gate SRAM

Shin Ichi O'uchi, Meishoku Masahara, Kunihiro Sakamoto, Kazuhiko Endo, Yungxun Liu, Takashi Matsukawa, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki

研究成果: Article査読

抄録

A Flex-Pass-Gate SRAM, i.e. a fin-type-field-effect-transistor-(FinFET-) based SRAM, is proposed to enhance noise margin during both read and write operations. In its cell, the flip-flop is composed of usual three-terminal-(3T-) FinFETs while pass gates are composed of four-terminal- (4T-) FinFETs. The 4T-FinFETs enable to adopt a dynamic threshold-voltage control in the pass gates. During a write operation, the threshold voltage of the pass gates is lowered to enhance the writing speed and stability. During the read operation, on the other hand, the threshold voltage is raised to enhance the static noise margin. An asymmetric-oxide 4T-FinFET is helpful to manage the leakage current through the pass gate. In this paper, a design strategy of the pass gate with an asymmetric gate oxide is considered, and a TCAD-based Monte Carlo simulation reveals that the Flex-Pass-Gate SRAM based on that design strategy is expected to be effective in half-pitch 32-nm technology for low-standby-power (LSTP) applications, even taking into account the variability in the device performance.

本文言語English
ページ(範囲)919-925+14
ジャーナルIEEJ Transactions on Electronics, Information and Systems
128
6
DOI
出版ステータスPublished - 2008
外部発表はい

ASJC Scopus subject areas

  • 電子工学および電気工学

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