Static frequency divider featuring reduced circuit complexity by utilizing resonant tunneling diodes in combination with HEMT's

A static frequency divider constructed with resonant tunneling diodes (RTD's) in combination with HKMT's is proposed and demonstrated. The circuit complexity is reduced drastically. The proposed circuit is fabricated using InP-based RTD/HEMT monolithic integration technology. Proper operation is demonstrated at room temperature by a quasi-static test pattern. The circuit includes two sub-circuits which behave like D-latches. Each sub-circuit consists of only three components. This number of components is one fifth of that required to construct a D-latch using conventional SCFL technology. The strong non-linear I - V characteristics of RTD's are fully utilized for this reduction.