Static frequency divider featuring reduced circuit complexity by utilizing resonant tunneling diodes in combination with HEMT's

Kunihiro Arai, Hideaki Matsuzaki, Koichi Maezawa, Taiichi Otsuji, Masafumi Yamamoto

研究成果: Article査読

16 被引用数 (Scopus)

抄録

A static frequency divider constructed with resonant tunneling diodes (RTD's) in combination with HKMT's is proposed and demonstrated. The circuit complexity is reduced drastically. The proposed circuit is fabricated using InP-based RTD/HEMT monolithic integration technology. Proper operation is demonstrated at room temperature by a quasi-static test pattern. The circuit includes two sub-circuits which behave like D-latches. Each sub-circuit consists of only three components. This number of components is one fifth of that required to construct a D-latch using conventional SCFL technology. The strong non-linear I - V characteristics of RTD's are fully utilized for this reduction.

本文言語English
ページ(範囲)544-546
ページ数3
ジャーナルIEEE Electron Device Letters
18
11
DOI
出版ステータスPublished - 1997 11月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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