Standby-power-free compact ternary content-addressable memory cell chip using magnetic tunnel junction devices

Shoun Matsunaga, Kimlyuki Hlyama, Atsushi Matsumoto, Shoji Ikeda, Haruhiro Hasegawa, Katsuya Miura, Jun Hayakawa, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu

研究成果: Article査読

79 被引用数 (Scopus)

抄録

A compact ternary content-addressable memory (TCAM) cell of 3.15μ.m 2 with a 0.14 μm complementary metal oxide semiconductor process is realized by the use of nonvolatile magnetic tunnel junction (MTJ) devices with spin-injection write. This TCAM cell based on logic-in-memory architecture with nonvolatile MTJs needs no standby power, yet allows instant shut-down of the supply voltage without data backup to an external nonvolatile device.

本文言語English
論文番号023004
ジャーナルApplied Physics Express
2
2
DOI
出版ステータスPublished - 2009 2

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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