Stacked sputtering process for Ti, Ta, and W carbide formation for gate metal application

K. Tuokedaerhan, R. Tan, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

研究成果: Article査読

9 被引用数 (Scopus)

抄録

A sputtering process using multi-stacking of carbon and metal thin films with subsequent annealing process to reactively form metal carbides (TiC, TaC, and W2C) has been presented. Grain sizes of the carbides are as small as 3.9, 3.2, and 1.9 nm for TiC, TaC, and W2C, respectively. Work functions of TiC, TaC, and W2C layers have been extracted as 4.3, 4.7, and 4.9 eV, respectively, relatively high values due to oriented growth. W2C layer formed by the presented process gives high potential to form carbides with nano-sized grain and high work function for gate electrode application.

本文言語English
論文番号111908
ジャーナルApplied Physics Letters
103
11
DOI
出版ステータスPublished - 2013 9 9
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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