Stack Structure Dependence of Magnetic Properties of PtMn/[Co/Ni] Films for Spin-Orbit Torque Switching Device

William A. Borders, Shunsuke Fukami, Hideo Ohno

研究成果: Article査読

10 被引用数 (Scopus)

抄録

We investigate the stack structure dependence of magnetic properties on thin films that consist of an antiferromagnetic PtMn and a ferromagnetic Co/Ni multilayer for field-free spin-orbit torque-induced magnetization switching devices. Magnetic parameters, such as the spontaneous magnetization, effective and interfacial magnetic anisotropies, and exchange bias field are quantified as a function of stack structure. Engineering of the stack allows the improvement of current-induced magnetization switching characteristics compared with a previous work, which is confirmed using patterned Hall cross devices.

本文言語English
論文番号7926446
ジャーナルIEEE Transactions on Magnetics
53
11
DOI
出版ステータスPublished - 2017 11

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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