抄録
A stable bottom-contact organic thin-film transistor array with a fluoropolymer gate dielectric has been demonstrated on a plastic substrate. An air stable organic semiconductor material, DNTT, was used as the active layer in combination of an amorphous fluoropolymer Cytop gate dielectric. The device exhibited a near-zero turn-on voltage, a steep onset, and a low off current (<10-13A). A low threshold voltage of 0.37 V and sub-threshold swing of 0.26 Vldecade was also achieved. Furthermore, the device showed excellent stability under ambient conditions without passivation. After gate bias stress of 104s was applied, a small shift of VTH below 1V was obtained.
本文言語 | English |
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ページ | 721-724 |
ページ数 | 4 |
出版ステータス | Published - 2009 |
外部発表 | はい |
イベント | 16th International Display Workshops, IDW '09 - Miyazaki, Japan 継続期間: 2009 12月 9 → 2009 12月 11 |
Other
Other | 16th International Display Workshops, IDW '09 |
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国/地域 | Japan |
City | Miyazaki |
Period | 09/12/9 → 09/12/11 |
ASJC Scopus subject areas
- ハードウェアとアーキテクチャ
- 人間とコンピュータの相互作用
- 電子工学および電気工学
- 電子材料、光学材料、および磁性材料