Stable bottom-contact organic thin-film transistor array with fluoropolymer dielectric for flexible displays

Y. Fujisaki; D. Kumaki; Y. Nakajima; T. Yamamoto; H. Fujikake; S. Tokito

Stable bottom-contact organic thin-film transistor array with fluoropolymer dielectric for flexible displays

Y. Fujisaki, D. Kumaki, Y. Nakajima, T. Yamamoto, H. Fujikake, S. Tokito

研究成果: Paper › 査読

抄録

A stable bottom-contact organic thin-film transistor array with a fluoropolymer gate dielectric has been demonstrated on a plastic substrate. An air stable organic semiconductor material, DNTT, was used as the active layer in combination of an amorphous fluoropolymer Cytop gate dielectric. The device exhibited a near-zero turn-on voltage, a steep onset, and a low off current (<10^-13A). A low threshold voltage of 0.37 V and sub-threshold swing of 0.26 Vldecade was also achieved. Furthermore, the device showed excellent stability under ambient conditions without passivation. After gate bias stress of 10⁴s was applied, a small shift of V_TH below 1V was obtained.

本文言語	English
ページ	721-724
ページ数	4
出版ステータス	Published - 2009
外部発表	はい
イベント	16th International Display Workshops, IDW '09 - Miyazaki, Japan 継続期間: 2009 12 9 → 2009 12 11

Other

Other	16th International Display Workshops, IDW '09
Country	Japan
City	Miyazaki
Period	09/12/9 → 09/12/11

ASJC Scopus subject areas

Hardware and Architecture
Human-Computer Interaction
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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引用スタイル

@conference{b24aab3001aa4ec09df48bece6b3a2eb,

title = "Stable bottom-contact organic thin-film transistor array with fluoropolymer dielectric for flexible displays",

abstract = "A stable bottom-contact organic thin-film transistor array with a fluoropolymer gate dielectric has been demonstrated on a plastic substrate. An air stable organic semiconductor material, DNTT, was used as the active layer in combination of an amorphous fluoropolymer Cytop gate dielectric. The device exhibited a near-zero turn-on voltage, a steep onset, and a low off current (<10-13A). A low threshold voltage of 0.37 V and sub-threshold swing of 0.26 Vldecade was also achieved. Furthermore, the device showed excellent stability under ambient conditions without passivation. After gate bias stress of 104s was applied, a small shift of VTH below 1V was obtained.",

author = "Y. Fujisaki and D. Kumaki and Y. Nakajima and T. Yamamoto and H. Fujikake and S. Tokito",

year = "2009",

language = "English",

pages = "721--724",

}

TY - CONF

T1 - Stable bottom-contact organic thin-film transistor array with fluoropolymer dielectric for flexible displays

AU - Fujisaki, Y.

AU - Kumaki, D.

AU - Nakajima, Y.

AU - Yamamoto, T.

AU - Fujikake, H.

AU - Tokito, S.

PY - 2009

Y1 - 2009

N2 - A stable bottom-contact organic thin-film transistor array with a fluoropolymer gate dielectric has been demonstrated on a plastic substrate. An air stable organic semiconductor material, DNTT, was used as the active layer in combination of an amorphous fluoropolymer Cytop gate dielectric. The device exhibited a near-zero turn-on voltage, a steep onset, and a low off current (<10-13A). A low threshold voltage of 0.37 V and sub-threshold swing of 0.26 Vldecade was also achieved. Furthermore, the device showed excellent stability under ambient conditions without passivation. After gate bias stress of 104s was applied, a small shift of VTH below 1V was obtained.

AB - A stable bottom-contact organic thin-film transistor array with a fluoropolymer gate dielectric has been demonstrated on a plastic substrate. An air stable organic semiconductor material, DNTT, was used as the active layer in combination of an amorphous fluoropolymer Cytop gate dielectric. The device exhibited a near-zero turn-on voltage, a steep onset, and a low off current (<10-13A). A low threshold voltage of 0.37 V and sub-threshold swing of 0.26 Vldecade was also achieved. Furthermore, the device showed excellent stability under ambient conditions without passivation. After gate bias stress of 104s was applied, a small shift of VTH below 1V was obtained.

UR - http://www.scopus.com/inward/record.url?scp=77954166856&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954166856&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:77954166856

SP - 721

EP - 724

T2 - 16th International Display Workshops, IDW '09

Y2 - 9 December 2009 through 11 December 2009

ER -