Stability of the Si-H bond on the hydrogen-terminated Si(1 1 1) surface studied by sum frequency generation

Shen Ye, Toshiya Saito, Satoshi Nihonyanagi, Kohei Uosaki, Paulo B. Miranda, Doseok Kim, Yuen Ron Shen

研究成果: Article査読

42 被引用数 (Scopus)

抄録

Stability of the Si-H bonds on the hydrogen-terminated Si(1 1 1) surface has been investigated by sum frequency generation (SFG) spectroscopy in air at room temperature. The SFG observation showed that the Si(1 1 1) surface is terminated by a monolayer of monohydride (Si-H) after etching in a concentrated ammonium fluoride (NH4F) solution. The number of Si-H bonds decreased with laser irradiation time and the abstraction rate of hydrogen atoms on Si increased with the increase of input energy of `visible' light. The Si-H bond under irradiation at 1064 nm light was more stable than that at 532 nm light with a given intensity. A small amount of water in air severely lowered the stability of Si-H bond because of a photoelectrochemical reaction under laser irradiation.

本文言語English
ページ(範囲)121-128
ページ数8
ジャーナルSurface Science
476
1-2
DOI
出版ステータスPublished - 2001 3 20
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

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