Stability of the fullerenes thin film deposited on the Si(100) surface

H. Rafil-Tabar, Y. Kawazoe, H. Kamiyama

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We have performed a constant temperature classical molecular dynamics simulation of the epitaxial growth of a C60 monolayers film deposited on the dimerized Si(100) surface. Our simulation, based on non-central many-body inter-atomic potentials, is capable of predicting the structural stability of the C60 film and the Si substrate and provides a theoretical basis for the results of a recently-performed STM-based for this system. Three-dimensional geometries have been generated on computer and used for the animation of the simulation runs.

本文言語English
ホスト出版物のタイトルMaterials Research Society Symposium - Proceedings
編集者Paul H. Townsend, Timothy P. Weihs, John E.Jr. Sanchez, Peter Borgesen
出版社Publ by Materials Research Society
ページ467-471
ページ数5
308
出版ステータスPublished - 1993
イベントProceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA
継続期間: 1993 4月 121993 4月 16

Other

OtherProceedings of the 1993 Spring Meeting of the Materials Research Society
CitySan Francisco, CA, USA
Period93/4/1293/4/16

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料

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