Stability of Si impurity in high-κ oxides

Naoto Umezawa, Kenji Shiraishi, Toyohiro Chikyow

研究成果: Article

抄録

The interface structure of a high permittivity (high-κ) oxide with Si substrate affects the electrical properties of the high-κ based transistors. Our theoretical analysis suggests that the formation of a SiO2 layer at the high-κ/Si interface originates from the instability of a Si impurity in the high-κ oxide. Our computational results revealed that the Si impurity is much more stable in La2O3 than in HfO2, indicating La2O3 is a silicate former, while SiO2 is likely to precipitate at the HfO2/Si interface.

本文言語English
ページ(範囲)1780-1781
ページ数2
ジャーナルMicroelectronic Engineering
86
7-9
DOI
出版ステータスPublished - 2009 7 1
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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