K 2 NiF 4 -type Sr 2 Rh 1-x Ru x O 4 (0 ≤ x ≤ 1) composition-spread films were fabricated on (LaAlO 3 ) 0.3 -(Sr 2 AlTaO 6 ) 0.7 (LSAT) substrate by using the combinatorial PLD method. From a temperature spread combinatorial deposition, Sr 2 RhO 4 (x = 0) is found to grow epitaxially only in a narrow temperature range, i.e. 735 ± 15 °C. By varying the composition and temperature along x and y axes of the substrate, respectively, two-dimensional (2D) libraries of Sr 2 Rh 1-x Ru x O 4 (0 ≤ x ≤ 1) films were fabricated to map the growth temperature dependence of film crystallinity for the full range of x = 0-1. The optimum epitaxial growth temperature exhibited clear dependence on the compositional variation, x. From measurements of the electric conductivity of the films, metal-insulator-metal transitions were detected as the compositional parameter x increased from 0 to 1.
ASJC Scopus subject areas
- 化学 (全般)