SPRAM (Spin-transfer torque RAM) technology for Green IT world

T. Kawahara, H. Takahashi, H. Ohno

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

In Green IT world, we could enjoy our daily life with immersed digital equipments that have perfect normally OFF and instant ON functions resulting from environment-conscious technologies. For achieving this, firstly we need a non-volatile RAM technology, namely endowed with non-volatility, infinite number of write cycles, and fast operation at the same time. SPRAM is the most promising solution for this demand.

本文言語English
ホスト出版物のタイトル2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOI
出版ステータスPublished - 2008
イベント2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China
継続期間: 2008 12 82008 12 10

出版物シリーズ

名前2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Other

Other2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
CountryChina
CityHong Kong
Period08/12/808/12/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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