Spontaneous formation and photoluminescence of ZnSe dot arrays

B. P. Zhang, W. X. Wang, T. Yasuda, Y. Segawa, K. Edamatsu, T. Itoh

研究成果: Article査読

18 被引用数 (Scopus)

抄録

Highly luminescent ZnSe quantum dot arrays (QDAs) are spontaneously formed on cleavage-induced GaAs (110) surfaces. The QDAs are configured for their preferred growth on the step top. The confinement on carriers results from the difference in the band gaps of the strained ZnSe layer and the strain-relaxed ZnSe QDA. In contrast to other emissions from the ZnSe layer, the linewidth of the QDA emission is dependent neither on temperature nor on excitation intensity. Moreover, the energy position of the QDA emission is stable even at high excitations. These results reflect the δ functionlike density of states of the QDAs. This letter suggests a novel approach to semiconductor QDs and QDAs.

本文言語English
ページ(範囲)3370-3372
ページ数3
ジャーナルApplied Physics Letters
71
23
DOI
出版ステータスPublished - 1997 12 8

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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