Split-gate organic field-effect transistors for high-speed operation

T. Uemura, T. Matsumoto, K. Miyake, M. Uno, S. Ohnishi, T. Kato, M. Katayama, S. Shinamura, M. Hamada, M. J. Kang, K. Takimiya, C. Mitsui, T. Okamoto, J. Takeya

研究成果: Article査読

25 被引用数 (Scopus)

抄録

Split-gate organic field-effect transistors have been developed for high-speed operation. Owing to the combination of reduced contact resistance and minimized parasitic capacitance, the devices have fast switching characteristics. The cutoff frequencies for the vacuum-evaporated devices and the solution-processed devices are 20 and 10 MHz, respectively. A speed of 10 MHz is the fastest device reported so far among solution-processed organic transistors.

本文言語English
ページ(範囲)2983-2988
ページ数6
ジャーナルAdvanced Materials
26
19
DOI
出版ステータスPublished - 2014 5 21
外部発表はい

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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