Spin-transfer torque RAM technology: Review and prospect

T. Kawahara, K. Ito, R. Takemura, H. Ohno

研究成果: Review article査読

199 被引用数 (Scopus)

抄録

Non-volatile RAM (NV-RAM) enables instant-on/off computing, which drastically reduces power consumption. One of the most promising candidates for NV-RAM technology is the spin-transfer torque RAM (SPRAM) based on magnetic tunnel junction (MTJ) device technology. This paper reviews the development of MTJ device technology and formulates considerations regarding its memory application, including SPRAM memory cell structure and operation, write voltage limitation, and thermal stability. At the circuit level, a disruptive read operation for future large integration scale is described. A 4F 2 memory cell and a multi-bit cell approach are also presented. Finally, the potential value of instant-on/off computing through NV-RAM and its impact are explored.

本文言語English
ページ(範囲)613-627
ページ数15
ジャーナルMicroelectronics Reliability
52
4
DOI
出版ステータスPublished - 2012 4

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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