Spin-resonant suppression and enhancement in ZnSe/Zn1-xMnxSe multilayer heterostructures

Y. Guo, B. L. Gu, H. Wang, Y. Kawazoe

研究成果: Article査読

42 被引用数 (Scopus)

抄録

We investigate spin-polarized transport through semimagnetic semiconductor heterostructures under the influence of both an external electric field and a magnetic field. The structural symmetric and asymmetric effects as well as the electric-field effect are stressed. The results indicate that (1) transmission resonances are drastically suppressed for spin electrons tunneling through the symmetric heterostructure under an applied bias; and (2) transmission resonances can be enhanced to optimal resonances for spin-up electrons tunneling through the asymmetric structure with double paramagnetic layers under a certain positive bias, while for spin-down ones tunneling through the same structure, resonances can also be enhanced to optimal resonances under a certain negative bias. Transmission suppression and enhancement originate from magnetic- and electric-field-induced and structure-tuned potentials. Spin-dependent resonant enhancement and negative differential resistances can be clearly seen in the current density. The results shown in this work might shed light on design and applications of spintronic devices.

本文言語English
論文番号214415
ページ(範囲)2144151-2144156
ページ数6
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
63
21
出版ステータスPublished - 2001 8 20

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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