Spin relaxation in GaAs(110) quantum wells

Y. Ohno, R. Terauchi, T. Adachi, F. Matsukura, H. Ohno

研究成果: Article査読

390 被引用数 (Scopus)

抄録

We investigated electron spin relaxation time τs in GaAs/AlGaAs (110) quantum wells (QWs), in which a predominant spin scattering mechanism [D'yakonov-Perel' (DP) mechanism] for conventional (100) QWs is substantially suppressed; τsin (110) QWs was of nanosecond order at room temperature, more than an order of magnitude longer than that of the (100) counterpart. The mechanism responsible for the spin relaxation was examined by studying the quantized energy, electron mobility, and temperature dependences of τs. The results suggest that in the absence of DP interaction, electron-hole exchange interaction limits τsin a wide temperature range (∼0–300K).

本文言語English
ページ(範囲)4196-4199
ページ数4
ジャーナルPhysical review letters
83
20
DOI
出版ステータスPublished - 1999 1 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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