Spin-Orbit-Torque Memory Operation of Synthetic Antiferromagnets

Takahiro Moriyama, Weinan Zhou, Takeshi Seki, Koki Takanashi, Teruo Ono

研究成果: Article査読

28 被引用数 (Scopus)

抄録

In this Letter, we show the demonstration of a sequential antiferromagnetic memory operation with a spin-orbit-torque write, by the spin Hall effect, and a resistive read in the CoGd synthetic antiferromagnetic bits, in which we reveal the distinct differences in the spin-orbit-torque and field-induced switching mechanisms of the antiferromagnetic moment, or the Néel vector. In addition to the comprehensive spin torque memory operation, our thorough investigations also highlight the high immunity to a field disturbance as well as a memristive behavior of the antiferromagnetic bits.

本文言語English
論文番号167202
ジャーナルPhysical review letters
121
16
DOI
出版ステータスPublished - 2018 10 18

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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