Spin-orbit torque-induced switching of an elliptical nanomagnet with an in-plane easy axis allows sub-ns and field-free operation. Since its properties crucially depend on the design of the nanomagnet such as the easy-axis direction, it is of high importance to systematically elucidate the dependence of performance on various parameters of the nanomagnet towards magnetoresistive random access memory applications. Here, we show a scheme to statistically evaluate the switching properties of in-plane nanomagnets in a short turnaround time. We use devices with an array of CoFeB/MgO nanomagnets formed on a cross-shaped Ta/W Hall bar, and the differential planar Hall resistance is measured to study the magnetization switching. Using the scheme, we investigate the easy-axis angle dependence of switching properties at zero magnetic fields for various current pulse widths from 100 ms to 1.7 ns. We show that the dependence of threshold switching current on the easy-axis direction significantly varies with the pulse width.
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